InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowth

InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowth

Author(s):

Publication title:

Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

618

Pub. Year:

2000

Page(from):

179

Pub. info.:

Warrendale, Pennsylvania.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995260 [1558995269]

Language:

English

Call no.:

M23500/618

Type:

Conference Proceedings

Details

TDL ID:	ZA00018049
Series ID:	PA00000011
Conf. info. (Name):	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films : Symposium
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.27

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