PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GaInP LAYERS GROWN BY MOLECULAR BEAM EPITAXY

PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GaInP LAYERS GROWN BY MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

325

Pub. Year:

1994

Page(from):

137

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992245 [1558992243]

Language:

English

Call no.:

M23500/325

Type:

Conference Proceedings

Details

TDL ID:	ZA00018005
Series ID:	PA00000011
Conf. info. (Name):	Symposium on physics and applications of defects in advanced semiconductors
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.01

Similar Items:

1 Conference Proceedings InP LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURE Xie, K., Wie, C.R., Wicks, G.W. Materials Research Society	7 Conference Proceedings Optical and Electrical Properties of Al1-xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy Danylyuk, Y.V., Lukitsch, M. J., Huang, C., Auner, G. W., Naik, R., Naik, V. M. Materials Research Society
2 Conference Proceedings CATHODOLUMINESCENCE SPECTROSCOPY STUDIES OF GROWTH INDUCED DEEP LEVELS AT GaInP Viturro, R. Enrique, Varriano, John D., Wicks, Gary W. MRS - Materials Research Society	8 Conference Proceedings Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium Shoukri, Kareem M., Haddara, Yaser M., Knights, Andrew P., Coleman, Paul G., Rahman, Mohammad M., Tatsuyama, C.C. Materials Research Society
3 Conference Proceedings CONTACT-RELATED DEEP STAGES IN Al-GaInP/GaAs INTERFACE Huang, Z. C., Wie, C. R. MRS - Materials Research Society	9 Conference Proceedings Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium Shoukri, Kareem M., Haddara, Yaser M., Knights, Andrew P., Coleman, Paul G., Rahman, Mohammad M., Tatsuyama, C.C. Materials Research Society
4 Conference Proceedings INTERFACE RECOMBINATION AND THRESHOLD CURRENT IN GRINSCH-QW AlGaAs/GaAs LASER DIODES Xie, K., Kim, H. M., Wie, C. R., Varriano, J. A., Wicks, G. W. Materials Research Society	10 Conference Proceedings Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy Song, J.D., Park, Y.M, Shin, J.C., Lim, J.G., Park, Y.J., Choi, W.J., Han, I.K., Cho, W.J., Lee, J.I., Kim, H.S., Park, … Materials Research Society
5 Conference Proceedings DEFECT-RELATED LUMINESCENCE IN MOLECULAR BEAM EPITAXY GROWN CdTe FILMS. CHOYKE,W.J., BURKE,M.G., FENG,Z.C., HANES,M.H., MASCARENHAS,A. Trans Tech Publications	11 Conference Proceedings Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs Hierro, A., Kwon, D., Ringel, S. A., Brillson, L. J., Young, A. P., Franciosi, A. MRS - Materials Research Society
6 Conference Proceedings USE OF VALVED, SOLID GROUP V SOURCES FOR THE GROWTH OF GaAs/GaInP HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY Johnson, F.G., Wicks, G.W., Viturro, R.E., LaForce, R. Materials Research Society	12 Conference Proceedings InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY Dobbelaere, W., De Boeck, J., De Raedt, W., Vanhellemont, J., Zou, G., Van Hove, M., Brijs, B., Mertens, R., Borghs, G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12