Blank Cover Image

A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111)

Author(s):
Yasuda, T.
Lee, D. R.
Bjorkman, C. H.
Ma, Y.
Lucovsky, G.
Emmerichs, U.
Meyer, C.
Leo, K.
Kurz, H.
4 more
Publication title:
Surface chemical cleaning and passivation for semiconductor processing
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
315
Pub. Year:
1993
Page(from):
375
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992139 [1558992138]
Language:
English
Call no.:
M23500/315
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS

Emmerichs, U., Meyer, C., Leo, K., Kurz, H., Bjorkman, C.H., Shearon, Jr., C.E., Ma, Y., Yasuda, T., Lucovsky, G.

Materials Research Society
7 Conference Proceedings INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES

Yasuda, T., Lucovsky, G.

Materials Research Society
2 Conference Proceedings LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS

Yasuda, T., ma, Y., Lucovsky, G.

Materials Research Society
8 Conference Proceedings CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES

Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J.

MRS - Materials Research Society
3 Conference Proceedings INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES

Bjorkman, C.H., Lee, D.R., Lucovsky, G.

Materials Research Society
9 Conference Proceedings A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES …

Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G.

Materials Research Society
4 Conference Proceedings Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society
10 Conference Proceedings COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE …

Yasuda, T., Ma, Y., Habermechl, S., Lucovsky, G.

Materials Research Society
5 Conference Proceedings Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society
11 Conference Proceedings Si3N4/SiO2 MULTI-LAYER REFLECTING STACKS FOR PHOTONIC SWITCHING APPLICATIONS

Stephens, D.J., He, S.S., Lucovsky, G., Mikkelsen, H., Leo, K., Kurz, H.

Materials Research Society
6 Conference Proceedings Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and …

Ma, Y., Yasuda, T., Lucovsky, G.

MRS - Materials Research Society
12 Conference Proceedings THE OPTICAL PROPERTIES OF PLASMA-DEPOSITED SiO2 AND Si3N4 BRAGG REFLECTORS IN THE SPECTRAL RANGE FROM 1.8 TO 3.0 eV

Stephens, D.J., He, S.S., Lucovsky, G., Mikkelsen, H., Leo, K., Kurz, H.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12