High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas | 東京工業大学附属図書館文献データベース

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High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas

Author(s):

Abernathy, C. R.

Kilcoyne, S. P.

Crawford, M. Hagerott

Parmeter, J. E.

Publication title:

Materials - fabrication and patterning at the nanoscale : Symposium held April 19-20, 1995, San Francisco, California, USA

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

380

Pub. Year:

1995

Page(from):

37

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992832 [1558992839]

Language:

English

Call no.:

M23500/380

Type:

Conference Proceedings

Details

TDL ID:	ZA00018002
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials-fabrication and patterning at the nanoscale
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.19-1995.04.20

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