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Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

Author(s):
Halimaoui, A.
Henrisey, E.
Hernandez, C.
Martins, J.
Paoli, M.
Regache, M.
Vallier, L.
Bensahel, D.
Blanchard, B.
Rouchon, D.
Martin, F.
6 more
Publication title:
Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
532
Pub. Year:
1998
Page(from):
159
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994386 [1558994386]
Language:
English
Call no.:
M23500/532
Type:
Conference Proceedings

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