Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
- Author(s):
Cao, X. A. Abernathy, C. R. Singh, R. K. Pearton, S. J. Fu, M. Sarvepalli, V. Sekhar, J. A. Zolper, J. C. Rieger, D. J. Han, J. Drummond, T. J. Shul, R. J. Wilson, R. G. - Publication title:
- Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 512
- Pub. Year:
- 1998
- Page(from):
- 463
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994188 [1558994181]
- Language:
- English
- Call no.:
- M23500/512
- Type:
- Conference Proceedings
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