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Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System

Author(s):
Cao, X. A.
Abernathy, C. R.
Singh, R. K.
Pearton, S. J.
Fu, M.
Sarvepalli, V.
Sekhar, J. A.
Zolper, J. C.
Rieger, D. J.
Han, J.
Drummond, T. J.
Shul, R. J.
Wilson, R. G.
8 more
Publication title:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
512
Pub. date:
1998
Page(from):
463
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994188 [1558994181]
Language:
English
Call no.:
M23500/512
Type:
Conference Proceedings

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