Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Author(s):

Publication title:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

512

Pub. Year:

1998

Page(from):

345

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

Language:

English

Call no.:

M23500/512

Type:

Conference Proceedings

Details

TDL ID:	ZA00017997
Series ID:	PA00000011
Conf. info. (Name):	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.14

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