High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3
- Author(s):
- Publication title:
- Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 512
- Pub. Year:
- 1998
- Page(from):
- 315
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994188 [1558994181]
- Language:
- English
- Call no.:
- M23500/512
- Type:
- Conference Proceedings
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