High-Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
- Author(s):
- Publication title:
- Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 512
- Pub. Year:
- 1998
- Page(from):
- 125
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994188 [1558994181]
- Language:
- English
- Call no.:
- M23500/512
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
Trans Tech Publications |
7
Conference Proceedings
High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
Trans Tech Publications |
2
Conference Proceedings
The Formation And Characterization Of Epitaxial Titanium Carbide Contacts To 4H-SiC
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |