Blank Cover Image

Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor

Author(s):
Publication title:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
512
Pub. Year:
1998
Page(from):
9
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994188 [1558994181]
Language:
English
Call no.:
M23500/512
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Gaska,R., Shur,M.S., Yang,J.W., Osinsky,A., Orlov,A.O., Snider,G.L.

Trans Tech Publications
7 Conference Proceedings Negative differential conductivity in AlGaN/GaN HEMTs: Real space charge transfer from 2D to 3D GaN states?

Deng, J., Gaska, R., Shur, M. S., Khan, M. A., Yang, J. W.

MRS-Materials Research Society
2 Conference Proceedings *Pizoelectric effects in AlGaN/GaN-based heterostructure field effect transistors

Shur, M.S., Bykhorski, A.D., Gaska, R.

Electrochemical Society
8 Conference Proceedings Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

Clarke, Frederick W., Ho, Fat Duen, Khan, M.Asif, Simin, Grigory, Yang, J., Gaska, Remis, Shur, Michael S., Deng, …

Materials Research Society
3 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates

Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., …

Materials Research Society
9 Conference Proceedings 1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Rumyantsev, S. L., Shur, M. S., Knap, W., Dyakonova, N., Pascal, F., Hoffman, A., Ghuel, Y., Gaquiere, C., Theron, D.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates

Pala, N., Gaska, R., Shur, M., Yang, J. W., Khan, M. A.

MRS-Materials Research Society
10 Conference Proceedings DC and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field-Effect Transistors on SiC Substrates

Chen, Q., Yang, J. W., Khan, M. A., Ping, A. T., Adesida, I.

MRS - Materials Research Society
5 Conference Proceedings Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors

Shur, M., Khan, M.A.

Electrochemical Society
11 Conference Proceedings Recent Progress in GaN Based Field Effect Transistors

Khan, M. A., Chen, Q., Sun, C. J., Yang, J. W., Shur, M. S.

MRS - Materials Research Society
6 Conference Proceedings Two-Dimensional Electron Gas Scattering Mechanisms in AlGaN/GaN Heterostructures

Borovitskaya, E., Knap, W., Shur, M. S., Gaska, R., Frayssinet, E., Lorenzini, P., Grandjen, N., Baumont, B., Massies, …

Materials Research Society
12 Conference Proceedings Piezoelectric Effects in AlGaN/GaN Heterostructure Field-Effect Transistors

Yu, E.T., Asbech, P.M., Lau, s.S., Sullivan, G.J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12