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Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices

Author(s):
Therrien, R. J.
Nam, O. H.
Bremser, M. D.
Lithicum, K.
Nimii, H.
Carlson, E. P.
Lucovsky, G.
Davis, R. F.
3 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. date:
1998
Page(from):
1107
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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