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Well Thickness and Doping Effects, and Room-Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple-Quantum-Wells

Author(s):
Zeng, K. C.
Smith, M.
Lin, J. Y.
Jiang, H. X.
Tang, H.
Salvador, A.
Kim, W.
Morkoc, H.
Khan, M. Asif
4 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. date:
1998
Page(from):
643
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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