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TEM Study of Interfaces and Defects in MOCVD-Grown GaN on SiC on SIMOX

Author(s):
Zhou, W. L.
Pirouz, P.
Namavar, F.
Colter, P. C.
Yoganathan, M.
Leksono, M. W.
Pankove, J. I.
2 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. Year:
1998
Page(from):
471
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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