The Core Structure of Pure Edge Threading Dislocations in GaN Layers Grown on (0001)SiC or Sapphire by MBE

The Core Structure of Pure Edge Threading Dislocations in GaN Layers Grown on (0001)SiC or Sapphire by MBE

Author(s):

Publication title:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

482

Pub. Year:

1998

Page(from):

459

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

Language:

English

Call no.:

M23500/482

Type:

Conference Proceedings

Details

TDL ID:	ZA00017994
Series ID:	PA00000011
Conf. info. (Name):	Symposium on nitride semiconductors
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.05

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