Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE
- Author(s):
- Publication title:
- Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 482
- Pub. Year:
- 1998
- Page(from):
- 417
- Pub. info.:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993877 [1558993878]
- Language:
- English
- Call no.:
- M23500/482
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
2
Conference Proceedings
InGaN Double Heterostructures and DH-LEDs on HVPE GaN-on-Sapphire Substrates
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS-Materials Research Society |
9
Conference Proceedings
Dislocations in GaN/Sapphire: Their Distribution and Effect on Stress and Optical Properties
MRS - Materials Research Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
Nitride-Based High-Power Devices: Transport Properties, Linear Defects, and Goals
MRS - Materials Research Society |
6
Conference Proceedings
Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE
Materials Research Society |
Materials Research Society |