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Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells

Author(s):
Liliental-Weber, Z.
Ruvimov, S.
Swider, W.
Kim, Y.
Washburn, J.
Nakamura, S.
Kern, R. S.
Chen, Y.
Yang, J. W.
4 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. Year:
1998
Page(from):
375
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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