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The Effect of Low-Temperature GaAs Nucleation on the Growth of GaN on Silicon(001) During MOVPE Process

Author(s):
Zheng, L. X.
Liang, J. W.
Yang, H.
Li, J. B.
Wang, Y. T.
Xu, D. P.
Li, X. F.
Duan, L. H.
Hu, X. W.
4 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. Year:
1998
Page(from):
69
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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