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Impurity Free Vacancy Disordering Using Phosphorous-Doped SiO2 and Pure SiO2 Caps

Author(s):
Cusumano, P.
Helmy, A. Saher
Ooi, B. S.
Rue, R. M. De La
Bryce, A. C.
Marsh, J. H.
1 more
Publication title:
Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
450
Pub. Year:
1997
Page(from):
419
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993549 [1558993541]
Language:
English
Call no.:
M23500/450
Type:
Conference Proceedings

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