Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Author(s):

Publication title:

Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

429

Pub. Year:

1996

Page(from):

233

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993327 [1558993320]

Language:

English

Call no.:

M23500/429

Type:

Conference Proceedings

Details

TDL ID:	ZA00017989
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	5th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.12

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