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Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of SiGeC on Si Formed by Ge and C Ion Implantation and Their Structural and Optical Properties

Author(s):
Kobayashi, N.
Katsumata, H.
Makita, Y.
Hasegawa, M.
Hayashi, N.
Shibata, H.
Uekusa, S.
Hishita, S.
3 more
Publication title:
Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
388
Pub. Year:
1995
Page(from):
189
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992917 [155899291X]
Language:
English
Call no.:
M23500/388
Type:
Conference Proceedings

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