DIFFUSION BEHAVIOR OF B-, As- AND Sb-DOPANTS IN THIN EPITAXIAL LAYERS
- Author(s):
- Publication title:
- Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 358
- Pub. Year:
- 1995
- Page(from):
- 945
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992597 [1558992596]
- Language:
- English
- Call no.:
- M23500/358
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
MRS - Materials Research Society |
2
Conference Proceedings
Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN)
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
9
Conference Proceedings
Optimization of Pre-Amorphization and Dopant Implant Conditions for Advanced Annealing
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |