EXCITATION TIME DEPENDENCE OF LUMINESCENCE DECAY IN THERMALLY OXIDIZED POROUS Si
- Author(s):
- Publication title:
- Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 358
- Pub. Year:
- 1995
- Page(from):
- 537
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992597 [1558992596]
- Language:
- English
- Call no.:
- M23500/358
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
EFFECT OF RAPID THERMAL OXIDATION ON BLUE AND RED LUMINESCENCE BANDS OF POROUS SILICON
MRS - Materials Research Society |
Materials Research Society |
8
Conference Proceedings
WIDE-GAP POLYSILANE PRODUCED BY PLASMA-ENHANCED CVD AT CRYOGENIC TEMPERATURES
Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
4
Conference Proceedings
STRUCTURAL CHARACTERIZATION OF POROUS SILICON FABRICATED BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF Si WAFERS
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
6
Conference Proceedings
Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition
MRS - Materials Research Society |
12
Conference Proceedings
Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
Trans Tech Publications |