Blank Cover Image

CHARACTERIZATION OF SILICON-NITRIDE FILM GROWTH BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (PRECVD)

Author(s):
Publication title:
Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
334
Pub. Year:
1994
Page(from):
341
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992337 [1558992332]
Language:
English
Call no.:
M23500/334
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S.

Materials Research Society
7 Conference Proceedings DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

Williams, M.J., Wang, C., Lucovsky, G.

Materials Research Society
2 Conference Proceedings Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

Stevens, G., Santos-Filho, P., Habermehl, S., Lucovsky, G.

MRS - Materials Research Society
8 Conference Proceedings Process Diagnostics for Remote Plasma-Enhanced Chemical Vapor Desposition (PECVD) of Silicon Nitrides

Banerjee, A., Lucovsky, G.

MRS - Materials Research Society
3 Conference Proceedings Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

Habermehl, S., Lucovsky, G.

American Institute of Chemical Engineers
9 Conference Proceedings DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)

Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G.

Materials Research Society
4 Conference Proceedings MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND …

Habermehl, S., He, S. S., Chen, Y. L., Lucovsky, G.

MRS - Materials Research Society
10 Conference Proceedings BONDED HYDROGEN IN SILICON OXIDE THIN FILMS DEPOSITED BY REMOT PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Tsu, D. V., Lucovsky, G.

Materials Research Society
5 Conference Proceedings Hydrogen Assisted Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Nitride Films

Santos-Filho, P., Koh, K., Stevens, G., Lucovsky, G.

MRS - Materials Research Society
11 Conference Proceedings STUDIES OF SiH2Cl2/H2 GAS PHASE CHEMISTRY FOR SELECTIVE THIN FILM GROWTH OF CRYSTALLINE SILICON, c-Si, USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Theil, J.A., Lucovsky, G., Hattangady, S.V., Fountain, G.G., Markunas, R.J.

Materials Research Society
6 Conference Proceedings Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)

Lucovsky, G., Lu, Z., Lee, D.R.

American Institute of Chemical Engineers
12 Conference Proceedings *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12