Longitudinally resolved measurements of carrier concentration and gain in 980-nm InGaAs/GaAs high-power quantum well lasers

Longitudinally resolved measurements of carrier concentration and gain in 980-nm InGaAs/GaAs high-power quantum well lasers

Author(s):

Publication title:

Fabrication, testing, and reliability of semiconductor lasers II : 13-14 February, 1997, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3004

Pub. Year:

1997

Page(from):

160

Page(to):

169

Pub. info.:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424150 [0819424153]

Language:

English

Call no.:

P63600/3004

Type:

Conference Proceedings

Details

TDL ID:	ZA00017975
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Fabrication, testing, and reliability of semiconductor lasers
Conf. info. (Number):	1997 : 2nd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1997.02.13-1997.02.14

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