Chemically amplified resist process for 0.25-ｦﾌm generation photomasks

Chemically amplified resist process for 0.25-ｦﾌm generation photomasks

Author(s):

Publication title:

Photomask and X-Ray Mask Technology III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2793

Pub. date:

1996

Page(from):

96

Page(to):

104

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819421791 [0819421790]

Language:

English

Call no.:

P63600/2793

Type:

Conference Proceedings

Details

TDL ID:	ZA00017954
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next Generation Lithography Mask Technology : Photomask and X-Ray Mask Technology
Conf. info. (Number):	1996 : 3rd
Conf. info. (Venue):	Kawasaki City, Kanagawa, Japan
Conf. info. (Date):	1996.04.18-1996.04.19

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