Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si

Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si

Author(s):

Publication title:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

Title of ser.:

Materials science forum

Ser. no.:

38-41

Pub. Year:

1989

Vol.:

Part2

Page(from):

851

Page(to):

856

Pub. info.:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00017895
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconduotors : ICDS
Conf. info. (Number):	15th
Conf. info. (Venue):	Budapest, Hungary
Conf. info. (Date):	1988.08.22-1988.08.26

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