Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities

Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities

Author(s):

Publication title:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

Title of ser.:

Materials science forum

Ser. no.:

38-41

Pub. Year:

1989

Vol.:

Part2

Page(from):

531

Page(to):

536

Pub. info.:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00017895
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconduotors : ICDS
Conf. info. (Number):	15th
Conf. info. (Venue):	Budapest, Hungary
Conf. info. (Date):	1988.08.22-1988.08.26

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