Localized Defect States in Tetrahedrally Bonded Semi-conductors
- Author(s):
- Publication title:
- Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
- Title of ser.:
- Materials science forum
- Ser. no.:
- 38-41
- Pub. Year:
- 1989
- Vol.:
- Part1
- Page(from):
- 317
- Page(to):
- 322
- Pub. info.:
- Aederlmannsdorf, Switzwelns: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495849 [0878495843]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature:Characterization of Localized States
Trans Tech Publications |
Plenum Press |
2
Conference Proceedings
ELECTRONIC STRUCTUR OF DIVALENT DEFECTS IN TETRAHEDRALLY BONDED AMORPHOUS MATERIALS
Materials Research Society |
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
EFFECTS OF DOPING AND ALLOYING ON NATIVE DEFECTS AND COMPLEX FORMATION IN Hgl-xCdxTe.
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Plenum Press |
6
Conference Proceedings
Localized Defect Centers and Continuous Distribution of Gap States in Polycrystalline Diamond
Electrochemical Society |
12
Conference Proceedings
Magnetic Resonance Probes Of Band Tail States And Defects In Tetrahedrally Coordinated Amorphous Semiconductors
Materials Research Society |