Lithography of 180-nm design rule for 1-Gb DRAM

Lithography of 180-nm design rule for 1-Gb DRAM

Author(s):

Nam,D. ( Samsung Electronics Co.,Ltd. (Korea) )

Lee,J. ( Samsung Electronics Co.,Ltd. (Korea) )

Kim,C. ( Samsung Electronics Co.,Ltd. (Korea) )

Choi,S. ( Samsung Electronics Co.,Ltd. (Korea) )

Kang,H. ( Samsung Electronics Co.,Ltd. (Korea) )

Moon,J. ( Samsung Electronics Co.,Ltd. (Korea) )

1 more

Publication title:

Optical microlithography XI : 25-27 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3334

Pub. Year:

1998

Page(from):

117

Page(to):

123

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427793 [0819427799]

Language:

English

Call no.:

P63600/3334

Type:

Conference Proceedings

Details

TDL ID:	ZA00017855
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	1998 : 11th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.25-1998.02.27

Similar Items:

1 Conference Proceedings Issues and challenges of double patterning lithography in DRAM S. Kim, S. Koo, J. Choi, Y. Hwang, J. Park, E. Kang, C. Lim, S. Moon, J. Kim SPIE - The International Society of Optical Engineering	7 Conference Proceedings Process latitude extension in low k1 DRAM lithography using specific layer-oriented illumination design Kang, Y.S., Nam, D.-S., Hwang, C., Woo, S.-G., Cho, H.-K., Han, W.-S. SPIE-The International Society for Optical Engineering
2 Conference Proceedings CD control at low K1 optical lithography in DRAM device Hong, J., Woo, C., Park, J., Cho, B., Choi, J.-S., Yang, H., Park, C., Shin, Y.-C., Kim, Y., Jeong, G., Kim, J., Kang, … SPIE-The International Society for Optical Engineering	8 Conference Proceedings Optimum field-size strategy for DRAM mass production in low-k1 process Park,C.-H., Yim,D., Lee,S.-H., Yang,H.-J., Choi,J.-H., Shin,Y.-C., Kim,C.-D., Choi,J.-S., Kang,K.-O., Kim,S.-W., … SPIE-The International Society for Optical Engineering
3 Conference Proceedings Patterning 220-nm pitch DRAM patterns by using double mask exposure Nam,D., Seong,N., Cho,H., Moon,J., Lee,S. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell Lee, J.-H., Chung, D.-H., Cha, D.-C., Kim, H.-S., Park, J.-S., Nam, D.-G., Woo, S.-K., Cho, H.-S., Han, W.-S. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Required mask specification for mass production devices below 65-nm design node [6349-81] Nam, D., Choi, S., Doh, J., Noh, Y., Lee, H., Sin, Y., Kim, B., Kang, M., Han, W. SPIE - The International Society of Optical Engineering	10 Conference Proceedings Implementation of the ArF resists based on VEMA for sub-100-nm device Kim, H.-W., Lee, S., Choi, S.-J., Lee, S.-H., Kang, Y., Woo, S.-G., Nam, D.S., Chae, Y.-S., Kim, J.S., Moon, J.-T., … SPIE-The International Society for Optical Engineering
5 Conference Proceedings Lithography process design for 4-Gb DRAM of 0.31 k1 with KrF Park,J., Yeo,G., Kim,I., Kim,B.-S., Lee,J., Cho,H., Moon,J.T. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Evaluation of ArF CLM in the sub-100-nm DRAM cell Lee, J.-H., Chung, D.-H., Kim, H.-C., Nam, D.-S., Woo, S.-G., Cho, H.-K., Han, W.-S. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Aberration sensitivity control for the isolation layer in low-k1 DRAM process Cho, B.-H., Yim, D., Park, C.-H., Lee, S.-H., Yang, H.-J., Choi, J.-H., Shin, Y.-C., Kim, C.-D., Choi, J.-S., Kang, … SPIE-The International Society for Optical Engineering	12 Conference Proceedings 0.33-k1 ArF lithography for 100-nm DRAM Bok, C.K., Kim, S.-K., Kim, H.-B., Oh, J.-S., Ahn, C.-N., Shin, K.-S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12