Investigation of defect concentration distributions in ion-implanted and annealed GaAs
- Author(s):
- Wang, K.L. ( University of California )
- Li, G.P. ( University of California )
- Asbeck, P.M. ( Rockwell International )
- Kirkpatrick, C.G. ( Rockwell International )
- Publication title:
- Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposia proceedings
- Ser. no.:
- 2
- Pub. Year:
- 1981
- Page(from):
- 487
- Page(to):
- 493
- Pub. info.:
- New York: North Holland
- ISSN:
- 02729172
- ISBN:
- 9780444005960 [044400596X]
- Language:
- English
- Call no.:
- M23500/2
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
MULTI-STEP RAPID THERMAL ANNEALING OF Si-IMPLANTED GaAs FOR MICROWAVE DISCRETE DEVICES AND MONOLITHIC INTEGRATED CIRCUITS FABRICATION
Materials Research Society |
North Holland |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
Photoluminescence and Raman Studies of Silicon Ion Implantation Annealing in GaAs
SPIE - The International Society for Optical Engineering |
5
Conference Proceedings
SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
National Aeronautics and Space Administration |