Melting and laser annealing in semiconductors using 0.485 mu m and 0.193 mu m pulsed lasers

Melting and laser annealing in semiconductors using 0.485 mu m and 0.193 mu m pulsed lasers

Author(s):

Narayan, J. ( Solid State Division, Oak Ridge National Laboratory )
Fletcher, J. ( Solid State Division, Oak Ridge National Laboratory )
Eby, R.E. ( Analytical Chemistry Division, Oak Ridge National Laboratory )

Publication title:

Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

2

Pub. Year:

1981

Page(from):

409

Page(to):

419

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444005960 [044400596X]

Language:

English

Call no.:

M23500/2

Type:

Conference Proceedings

Details

TDL ID:	ZA00017841
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting ; Symposium on defects in semiconductors
Conf. info. (Number):	1980
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1980.11.16-1980.11.20

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