Copper contamination effect on the reliability of devices in the BiCMOS technology

Copper contamination effect on the reliability of devices in the BiCMOS technology

Author(s):

Low,K.S. ( Infineon Technologies AG(Germany)and Univ.of Newcastle upon Tyne )
Schwerd,M.
Koerner,H.
Barth,H.J.
O'Neil,A.

Publication title:

Multilevel Interconnect Technology III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3883

Pub. Year:

1999

Page(from):

24

Page(to):

33

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434807 [0819434809]

Language:

English

Call no.:

P63600/3883

Type:

Conference Proceedings

Details

TDL ID:	ZA00017633
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Multilevel Interconnect Technology
Conf. info. (Number):	1999 : 3rd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.09.22-1999.09.23

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