Effective OPC pattern generation using chemically amplified resist 0.13-ｦﾌm design rule masks

Effective OPC pattern generation using chemically amplified resist 0.13-ｦﾌm design rule masks

Author(s):

Lee,I.-H. ( DuPont Photomasks Korea Ltd. )
Nam,K.-H.
Kim,H.-S.

Publication title:

Photomask and Next-Generation Lithography Mask Technology VII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4066

Pub. Year:

2000

Page(from):

705

Page(to):

715

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819437020 [0819437026]

Language:

English

Call no.:

P63600/4066

Type:

Conference Proceedings

Details

TDL ID:	ZA00017594
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next-Generation Lithography Mask Technology
Conf. info. (Number):	2000 : 7th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2000.04.12-2000.04.13

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