EFFECTS OF HALOGEN-CONTAINING GAS PLASMA AND RAPID THERMAL ANNEAL TREATMENT ON THE REACTIVE ION ETCHED SILICON

EFFECTS OF HALOGEN-CONTAINING GAS PLASMA AND RAPID THERMAL ANNEAL TREATMENT ON THE REACTIVE ION ETCHED SILICON

Author(s):

Publication title:

Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

324

Pub. Year:

1994

Page(from):

481

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992238 [1558992235]

Language:

English

Call no.:

M23500/324

Type:

Conference Proceedings

Details

TDL ID:	ZA00017537
Series ID:	PA00000011
Conf. info. (Name):	Symposium on diagnostic techniques for semiconductor materials processing
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

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