PHOTOLUMINESCENCE CHARACTERIZATION OF InP-BASED HEMT STRUCTURES
- Author(s):
- Publication title:
- Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 324
- Pub. Year:
- 1994
- Page(from):
- 211
- Pub. info.:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992238 [1558992235]
- Language:
- English
- Call no.:
- M23500/324
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Barrier-Free AuGe-Au Ohmic Contacts for Double Doped AlInAs/GaInAs/InP HEMT Structures
Electrochemical Society |
8
Conference Proceedings
A High-Sensitivity Hydrogen Sensor Based on Pd/InP Schottky Diode Structure
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
10
Conference Proceedings
CHARACTERIZATION OF PSEUDOMORPHIC HEMT STRUCTURES BY MODULATION SPECTROSCOPY
MRS - Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Kluwer Academic Publishers |
Electrochemical Society |