Structural Disorder and Localized Gap States in Silicon Grain Boundaries From a Tight-Binding Model

Structural Disorder and Localized Gap States in Silicon Grain Boundaries From a Tight-Binding Model

Author(s):

Publication title:

Tight-binding approach to computational materials science : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

491

Pub. Year:

1998

Page(from):

513

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993969 [1558993967]

Language:

English

Call no.:

M23500/491

Type:

Conference Proceedings

Details

TDL ID:	ZA00017527
Series ID:	PA00000011
Conf. info. (Name):	Symposium on tight-binding approach to computational materials science
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.03

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