Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing
- Author(s):
- Publication title:
- III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 449
- Pub. Year:
- 1997
- Page(from):
- 1115
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993532 [1558993533]
- Language:
- English
- Call no.:
- M23500/449
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
*SINGLE CRYSTAL NiSi2/Si INTERFACES: FABRICATION, STRUCTURES, AND SCHOTTKY BARRIER HEIGHTS
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
9
Conference Proceedings
Calculate Electoronic Structures and Schottky Barrier Heights of (111) NiS2/Si A-and B-Type Inetrfaces
Plenum Press |
4
Conference Proceedings
TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
11
Conference Proceedings
Rapid thermal annealing effects on radio-frequency magnetron-sputtered P-type GaN thin films and Al/P-type GaN Schottky diodes
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |