GaN Crystals Grown in the Increased Volume High-Pressure Reactors
- Author(s):
Porowski, S. Bockowski, M. Lucznik, B. Wroblewski, M. krukowski, S. Grzegory, I. Leszczynski, M. Nowak, G. Pakula, K. Baranowski, J. - Publication title:
- III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 449
- Pub. Year:
- 1997
- Page(from):
- 35
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993532 [1558993533]
- Language:
- English
- Call no.:
- M23500/449
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
MRS - Materials Research Society |
3
Conference Proceedings
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (Invited Paper) [6121-02]
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
5
Conference Proceedings
Growth of bulk GaN by HVPE on pressure grown seeds (Invited Paper) [6121-07]
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers
Trans Tech Publications |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |