Trapping Behavior of Thin Siliconoxynitride Layers Prepared by Rapid Thermal Processing
- Author(s):
Beyer, R. Burghardt, H. Reich, R. Thomas, E. Grambole, D. Herrmann, F. Scholz, T. Albrecht, J. Zahn, D. R. T. Gessner, T. - Publication title:
- Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 428
- Pub. Year:
- 1996
- Page(from):
- 421
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993310 [1558993312]
- Language:
- English
- Call no.:
- M23500/428
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Ultrathin High-Quality Ta2O5 Gate Dielectrics Prepared by In Situ Rapid Thermal Processing
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
MRS - Materials Research Society |
9
Conference Proceedings
STRESS GRADIENTS IN SiO2 THIN FILMS PREPARED BY THERMAL OXIDATION AND SUBJECTED TO RAPID THERMAL ANNEALING
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
5
Conference Proceedings
Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
6
Conference Proceedings
Cross-Sectional Micro-Raman Spectroscopy:A Tool for Structural Investigations of Thin Polytypic SiC Layers
Trans Tech Publications |
12
Conference Proceedings
CHARACTERISTICS OF THIN LAYERS OF SiO2 FABRICATED BY RAPID THERMAL OXIDATION
Materials Research Society |