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A Two-Step, Lightly Nitrided Gate Oxidation process for Sub-0.5ヲフm CMOS Technology

Author(s):
Publication title:
Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
428
Pub. Year:
1996
Page(from):
409
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993310 [1558993312]
Language:
English
Call no.:
M23500/428
Type:
Conference Proceedings

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