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Ultra-Shallow Raised p+n Junctions with Self-Aligned Titanium Silicide Contacts Formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers

Author(s):
Publication title:
Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
387
Pub. Year:
1995
Page(from):
401
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992900 [1558992901]
Language:
English
Call no.:
M23500/387
Type:
Conference Proceedings

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