Development of the large-area silicon PIN diode with 2-millimeter-thick depletion layer for hard x-ray detector (HXD) on board Astro-E

Author(s):

Sugizaki,M. ( Institute of Space and Astronautical Science (Japan) )

Kubo,S. ( Institute of Space and Astronautical Science (Japan) )

Murakami,T. ( Institute of Space and Astronautical Science (Japan) )

Ota,N. ( Institute of Space and Astronautical Science (Japan) )

Ozawa,H. ( Institute of Space and Astronautical Science (Japan) )

Takahashi,T. ( Institute of Space and Astronautical Science (Japan) )

Kaneda,H. ( Univ.of Tokyo (Japan) )

Iyomoto,N. ( Univ.of Tokyo (Japan) )

Kamae,T. ( Univ.of Tokyo (Japan) )

Kokubun,M. ( Univ.of Tokyo (Japan) )

Kubota,A. ( Univ.of Tokyo (Japan) )

Makishima,K. ( Univ.of Tokyo (Japan) )

Tamura,T. ( Univ.of Tokyo (Japan) )

Tashiro,M. ( Univ.of Tokyo (Japan) )

Koyama,K. ( Kyoto Univ.(Japan) )

Tsunemi,H. ( Osaka Univ.(Japan) )

11 more

Publication title:

Hard X-ray and gamma-ray detector physics, optics, and applications : 31 July-1 August 1997, San Diego, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3115

Pub. Year:

1997

Page(from):

244

Page(to):

253

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819425379 [0819425370]

Language:

English

Call no.:

P63600/3115

Type:

Conference Proceedings