Blank Cover Image

Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x｡ﾁ0.2 to 0.3) by EBIC method

Author(s):
Franc,J. ( Charles Univ.(Czech Requblic) )
Belas,E. ( Charles Univ.(Czech Requblic) )
Grill,R. ( Charles Univ.(Czech Requblic) )
Toth,A. ( Research Institute for Technical Physics (Hungary) )
Sitter,H. ( Johannes Kepler Univ.(Austria) )
Moravec,P. ( Charles Univ.(Czech Requblic) )
Hoschl,P. ( Charles Univ.(Czech Requblic) )
2 more
Publication title:
Material science and material properties for infrared optoelectronics : 30 September-2 October 1996, Uzhgorod, Ukraine
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3182
Pub. Year:
1997
Page(from):
207
Page(to):
215
Pub. info.:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426093 [0819426091]
Language:
English
Call no.:
P63600/3182
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Characterization of diffusion length of minority carriers in(CdZn)Te at temperatures of 80 to 300 K

Franc,J., Belas,E., Hlidek,P., Toth,A.L., Sitter,H., Grill,R., Hoschl,P., Moravec,P.

SPIE - The International Society for Optical Engineering
7 Conference Proceedings Chemical Diffusion of Cobalt in the System La0.9Sr0.1Ga0.8Mg0.2O3-δ/La1-xSrxCoO3-δ (x=0.3 to 0.4)

Argirusis, C., Kilo, M., Fielitz, P., Borchardt, G., Guntow, U, Weber, A., Mueller, A., Ivers-Tiffee, E.

Electrochemical Society
2 Conference Proceedings Transport properties of p-Hg1-xCdxTe(x=0.22)

Moravec,P., Grill,R., Franc,J., Hoschl,P., Belas,E.

SPIE - The International Society for Optical Engineering
8 Conference Proceedings Recent Refinements in the Surface Photovoltage Method for Measuring Very Long Minority Carrier Diffusion Length

Lagowski, J., Faifer, V., Edelman, P.

Electrochemical Society
3 Conference Proceedings Preparation of semi-insulating CdTe by post-growth annealing

Grill, R., Turkevych, I., Franc, J., Hoeschl, P., Belas, E., Moravec, P.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings INFLUENCE OF RAPID THERMAL PROCESSING ON MINORITY CARRIER DIFFUSION LENGTH IN SILICON

Eichammer, Wolfgang A., Vu, Thuong-Quat, Siffert, P.

Materials Research Society
4 Conference Proceedings Correlation between crystal defects and properties of CdTe:Ge radiation detectors

Feichuk,P., Shcherbak,L., Pluta,D., Moravec,P., Franc,J., Belas,E., Hoschl,P.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing

Bellutti, P., Calderara, M., Porrini, M., Cornara, M., Olmo, M.

Electrochemical Society
5 Conference Proceedings Pure and deep-level doped semi-insulating CdTe

Hoschl,P., Grill,R., Franc,J., Belas,E., Turjanska,L., Turkevych,I., Benz,K.W., Fiederle,M.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Structure of Ti0.9Zr0.1Mn1.5V0.3Ti0.2D2.8

Smirnova, T.N., Mitrokhin, S.V., Somenkov, V.A., Glazkov, V.P., Savenko, B.N., Verbetsky, V.N.

Kluwer Academic Publishers
6 Conference Proceedings Twinning effects in Hg1-xCdxTe (x｡ﾁ0.2) grown by THM in the <111> direction

Weiss, Eliezer, Kedar, Ehud, Mainzer, Nili

MRS - Materials Research Society
12 Conference Proceedings New surface photovoltage (SPV) method for high precision measurement of the minority carrier diffusion length and surface recombination velocity in silicon …

Faifer, V., Edelman, P., Kontkiewicz, A., Lagowski, J., Hoff, A., Dyukov, V., Pravdivtsev, A., Kornienko, I.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12