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Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy

Author(s):
Podor,B. ( Research Institute for Technical Physics (Hungary) )
Vignaud,D. ( Univ.de Lille (France) )
Tiginyanu,I. M. ( Institute of Applied Physics (Moldova) )
Csontos,L. ( Research Institute for Technical Physics (Hungary) )
Ursaki,V. V. ( Institute of Applied Physics (Moldova) )
Shontya,V. P. ( Technical Univ.of Moldova )
1 more
Publication title:
Material science and material properties for infrared optoelectronics : 30 September-2 October 1996, Uzhgorod, Ukraine
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3182
Pub. date:
1997
Page(from):
142
Page(to):
145
Pub. info.:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426093 [0819426091]
Language:
English
Call no.:
P63600/3182
Type:
Conference Proceedings

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