Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

Author(s):

Chu,J. ( Shanghai Institute of Technical Physics (China) )

Liu,K. ( Shanghai Institute of Technical Physics (China) )

Chang,Y. ( Shanghai Institute of Technical Physics (China) )

Liu,P. ( Shanghai Institute of Technical Physics (China) )

Li,B. ( Shanghai Institute of Technical Physics (China) )

Guo,S. ( Shanghai Institute of Technical Physics (China) )

Chen,M. ( Shanghai Institute of Technical Physics (China) )

Tang,D. ( Shanghai Institute of Technical Physics (China) )

3 more

Publication title:

Material science and material properties for infrared optoelectronics : 30 September-2 October 1996, Uzhgorod, Ukraine

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3182

Pub. Year:

1997

Page(from):

30

Page(to):

38

Pub. info.:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426093 [0819426091]

Language:

English

Call no.:

P63600/3182

Type:

Conference Proceedings

Details

TDL ID:	ZA00017401
Series ID:	PA00000029
Conf. info. (Name):	Material Science and Material Properties for Infrared Optoelectronics
Conf. info. (Number):	1996
Conf. info. (Venue):	Uzhgorod, Ukraine
Conf. info. (Date):	1996.09.30-1996.10.02

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