Blank Cover Image

SOS MOSFET's

Author(s):
Merckel G.  
Publication title:
Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977]
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
21
Pub. Year:
1977
Page(from):
725
Page(to):
738
Pages:
14
Pub. info.:
Leyden: Noordhoff International Publishing
ISSN:
0168132X
ISBN:
9789028606678 [902860667X]
Language:
English
Call no.:
N11482/21
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings CAD models of MOSFET's

Merckel G.

Noordhoff International Publishing
7 Conference Proceedings An SOS MEMS interferometer

Tejada, F., Wesolek, D.M., Lehtonen, J., Miragliotta, J.A., Andreou, A.G., Osiander, R.

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Short channels. Scaled down MOSFET's

Merckel G.

Noordhoff International Publishing
8 Conference Proceedings Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs

Lukyanchikova, N., Petrichuk, M., Garbar, N., Simoen, E., Claeys, C.

Electrochemical Society
3 Conference Proceedings Ion implanted MOS transistors

Merckel G.

Noordhoff International Publishing
9 Conference Proceedings Laser-assisted MOS/SOS transistor fabrication

Hess, L.D., Kokorowski, S.A., Olson, G.L., Chi, Y.M., Gupta, A., Valdez, J.B.

North Holland
4 Conference Proceedings Surface characterization. Weak inversion

Merckel G.

Noordhoff International Publishing
10 Conference Proceedings Figures-of-merit of Intrinsic, standard-doped and graded-channel SOt and SOS MOSFETs for analog baseband and RF applications

Levacq, D., Dehan, M., Flandre, D., Raskin, J.-P.

Electrochemical Society
5 Conference Proceedings Surface characterization. C-V technique

Merckel G., de Pontcharra J.

Noordhoff International Publishing
11 Conference Proceedings A METHOD TO DETERMINE THE DENSITY OF SURFACE STATES AND INTERFACIAL CHARGE DENSITY IN N-CHANNEL SOS MOSFET’S

Annamalai, N.K., Khondker, A.N.

Materials Research Society
6 Conference Proceedings Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

Hefyene, N., Cristoloveanu, S., Ghibaudo, G., Matsui, M., Yasujima, A.

Electrochemical Society
12 Conference Proceedings *THIN (100 nm) SOS FOR APPLICATION TO BEYOND VLSI MICROELECTRONICS

Reedy, R. E., Garcia, G. A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12