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Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs

Author(s):
Publication title:
Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3975
Pub. date:
2000
Vol.:
Part2
Page(from):
896
Page(to):
899
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819436016 [0819436011]
Language:
English
Call no.:
P63600/3975
Type:
Conference Proceedings

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