ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator
- Author(s):
- Publication title:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3975
- Pub. Year:
- 2000
- Vol.:
- Part2
- Page(from):
- 803
- Page(to):
- 810
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- Language:
- English
- Call no.:
- P63600/3975
- Type:
- Conference Proceedings
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