Mask-Induced Strain in GaAs Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth

Mask-Induced Strain in GaAs Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth

Author(s):

Publication title:

Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

570

Pub. Year:

1999

Page(from):

273

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994775 [1558994777]

Language:

English

Call no.:

M23500/570

Type:

Conference Proceedings

Details

TDL ID:	ZA00017067
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxial growth-principles and applications
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

Similar Items:

1 Conference Proceedings Epitaxial Lateral Overgrowth of Gallium Arsenide Studied by Synchrotron Topography Rantamaki, R., Tuomi, T., Zytkiewicz, Z. R., Dobosz, D., McNally, P. J., Danilewsky, A. N. MRS - Materials Research Society	7 Conference Proceedings Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth Wraback, M., Shen, H., Eiting, C. J., Carrano, J. C., Dupuis, R. D. MRS-Materials Research Society
2 Conference Proceedings Strain in epitaxial laterally overgrown (ELO) structures Zytkiewicz,Z.R. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Synchrotron X-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire McNally, P. J., Tuomi, T., Rantamaki, R., Jacobs, K., Considine, L., O'Hare, M., Lowney, D., Danilewsky, A. N. MRS-Materials Research Society
3 Conference Proceedings Stress-induced effects in semiconducting epitaxial layers Bak-Misiuk,J., Domagala,J., Misiuk,A., Kaniewski,J., Adamczewska,J., Trela,J., Reginski,K., Dobosz,D., Prujszczyk,M., … SPIE-The International Society for Optical Engineering	9 Conference Proceedings InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowth Jasinski, J., Babinski, A., Czeczott, M., Bozek, R. MRS-Materials Research Society
4 Conference Proceedings Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy. Liu, W.Y., Tsay, J.D., Guo, Y.D., Liu, H.P., Yeh, R.C. Electrochemical Society	10 Conference Proceedings Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society
5 Conference Proceedings Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth Kung,P., Walker,D., Sandvik,P., Hamilton,M., Diaz,J., Lee,I.-H., Razeghi,M. SPIE - The International Society for Optical Engineering	11 Conference Proceedings Lateral epitaxial overgrowth for defect-free GaN substrates Freitas,J.A.,Jr., Saparin,G.V., Nam,O-H., Zheleva,T.S., Davis,R.F. SPIE - The International Society for Optical Engineering
6 Conference Proceedings GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates Mynbaeva, M., Titkov, A., Kryzhanovski, A., Zubrilov, A., Ratnikov, V., Davydov, V., Kuznetsov, N., Mynbaev, K., … MRS-Materials Research Society	12 Conference Proceedings Epitaxial lateral overgrowth of GaN by HVPE and MOVPE Zhang, R., Gu, S.L., Lu, D.Q., Shen, B., Shi, Y., Zhang, L., Kuech, T.F., Boleslawski, M.P., Kuan, T.S., Zheng, Y. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12