Comparison of Oxygen and Hydrogen Gettering at High-Temperature Postimplantation Annealing of Hydrogen- and Helium-Implanted Czochralski Silicon

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Postimplantation Annealing of Hydrogen- and Helium-Implanted Czochralski Silicon

Author(s):

Publication title:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

510

Pub. Year:

1998

Page(from):

425

Pub. info.:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

Language:

English

Call no.:

M23500/510

Type:

Conference Proceedings

Details

TDL ID:	ZA00017062
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.17

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